Photoluminescence in delta-doped InGaAs/GaAs single quantum wells
We have studied the time integrated (cw) and time resolved photoluminescence (PL) spectra of Si δ-doped In0.2Ga0.8As/GaAs quantum wells (QWs), in which the δ doping layer was either at the center of the quantum well or outside the well, in the barrier r
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|Source:||Journal of Applied Physics|
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