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Nitrogen-induced enhancement of the free electron concentration in Sulfur implanted GaNxAs1-x

Yu, Kin Man; Walukiewicz, W; Shan, Wei; Wu, J; Ager, J W; Haller, E E; Garza, J; Ridgway, Mark C

Description

We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/90035
Source: Applied Physics Letters

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