Nitrogen-induced enhancement of the free electron concentration in Sulfur implanted GaNxAs1-x
We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
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