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Preparation of a 10 nm thick single-crystal silicon membrane self-supporting over a diameter of 1 mm

Utteridge, S; Sashin, V A; Canney, S; Ford, Michele; Fang, Z; Oliver, D; Vos, Maarten; Weigold, Erich

Description

We report the fabrication of a 10 nm thick, self-supporting, single-crystal silicon membrane. The fabrication process can be broken up into four major stages. First, a buried SiO2 layer was formed by implantation of oxygen at a depth of 200 nm into a (100) silicon wafer. The size of the membrane was then established by removing the bulk of the silicon over a 1 mm area using a fast acid etch. After this the sample was etched in a hot EDP solution which stops at the buried SiO2 layer. The sample...[Show more]

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/89879
Source: Applied Surface Science
DOI: 10.1016/S0169-4332(00)00216-6

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