Utteridge, S; Sashin, V A; Canney, S; Ford, Michele; Fang, Z; Oliver, D; Vos, Maarten; Weigold, Erich
We report the fabrication of a 10 nm thick, self-supporting, single-crystal silicon membrane. The fabrication process can be broken up into four major stages. First, a buried SiO2 layer was formed by implantation of oxygen at a depth of 200 nm into a (100) silicon wafer. The size of the membrane was then established by removing the bulk of the silicon over a 1 mm area using a fast acid etch. After this the sample was etched in a hot EDP solution which stops at the buried SiO2 layer. The sample...[Show more]
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