Preparation of a 10 nm thick single-crystal silicon membrane self-supporting over a diameter of 1 mm
Utteridge, S; Sashin, V A; Canney, S; Ford, Michele; Fang, Z; Oliver, D; Vos, Maarten; Weigold, Erich
Description
We report the fabrication of a 10 nm thick, self-supporting, single-crystal silicon membrane. The fabrication process can be broken up into four major stages. First, a buried SiO2 layer was formed by implantation of oxygen at a depth of 200 nm into a (100) silicon wafer. The size of the membrane was then established by removing the bulk of the silicon over a 1 mm area using a fast acid etch. After this the sample was etched in a hot EDP solution which stops at the buried SiO2 layer. The sample...[Show more]
Collections | ANU Research Publications |
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Date published: | 2000 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/89879 |
Source: | Applied Surface Science |
DOI: | 10.1016/S0169-4332(00)00216-6 |
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01_Utteridge_Preparation_of_a_10_nm_thick_2000.pdf | 335.76 kB | Adobe PDF | Request a copy |
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