Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing
The quality of spin-on silica films prebaked at different temperatures has been studied using Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and P-etch [HF(40%):HNO3(70%): H2O=3:2:60] measurements. Low-temperature photoluminescence (PL) was performed on GaAs/AlGaAs quantum-well (QW) structures encapsulated by the same films. For all the prebaked films, not only the Si-O-Si peaks, but also OH-related peaks were detected in the IR spectra. After annealing at 950°C for 60 s,...[Show more]
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|Source:||Applied Physics Letters|
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