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Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire

Fu, Y; Willander, M; Lu, Wei; Liu, Qiuxiang; Shen, S C; Jagadish, Chennupati; Gal, Michael; Zou, Jin; Cockayne, David John Hugh

Description

We report a theoretical investigation of the strain effects on the electronic energy band in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire formed in a V-grooved substrate. Our model is based on the sp3s* tight-binding model. It includes different spatial distributions of the lattice-mismatch-induced strain. We solve numerically the tight-binding Hamiltonian through the local Green's function from which the electronic local density of states (LDOS) is obtained. The detailed energy...[Show more]

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/89814
Source: Physical Review B

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