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Ge-doped SiO 2 Thin Films Produced by Helicon Activated Reactive Evaporation

Li, Wei; Bulla, Douglas; Charles, Christine; Boswell, Roderick; Love, John; Luther-Davies, Barry

Description

Ge-doped SiO2 thin films for optical waveguide application were produced at low temperature by using an improved helicon plasma assisted reactive evaporation technique. Pure Si and Ge materials were simultaneously evaporated from two separated crucibles by using e-beams into high-density oxygen plasma to form the oxide films on a substrate. The film density was enhanced by supplying an r.f. bias to the substrate. Nearly H-free Ge-doped SiO2 thin films with very high atomic density (∼0.66×1023...[Show more]

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
URI: http://hdl.handle.net/1885/89696
Source: Thin Solid Films
DOI: 10.1016/S0040-6090(02)00711-3

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