Ge-doped SiO 2 Thin Films Produced by Helicon Activated Reactive Evaporation
Ge-doped SiO2 thin films for optical waveguide application were produced at low temperature by using an improved helicon plasma assisted reactive evaporation technique. Pure Si and Ge materials were simultaneously evaporated from two separated crucibles by using e-beams into high-density oxygen plasma to form the oxide films on a substrate. The film density was enhanced by supplying an r.f. bias to the substrate. Nearly H-free Ge-doped SiO2 thin films with very high atomic density (∼0.66×1023...[Show more]
|Collections||ANU Research Publications|
|Source:||Thin Solid Films|
|01_Li_Ge-doped_SiO_2__Thin_Films_2002.pdf||396.26 kB||Adobe PDF||Request a copy|
|02_Li_Ge-doped_SiO_2__Thin_Films_2002.pdf||396.26 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.