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Role of Ions in SiO 2 Deposition with Pulsed and Continuous Helicon Plasmas

Charles, Christine


Good-quality silicon dioxide films have been deposited at low temperature (≤200 °C) using continuous and pulsed oxygen/silane plasmas coupled in a high-density, low-pressure helicon reactor. Although the total ion flux determines many of the structural

CollectionsANU Research Publications
Date published: 2002
Type: Journal article
Source: Pure and Applied Chemistry


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