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Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment

Kucheyev, Sergei; Williams, James; Jagadish, Chennupati; Zou, Jin; Li, Gang

Description

The effects of elevated-temperature ion bombardment of wurtzite GaN films preamorphized by ion implantation are studied by Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Amorphous layers annealed in vacuum at 500°

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/89280
Source: Journal of Applied Physics

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