Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment
The effects of elevated-temperature ion bombardment of wurtzite GaN films preamorphized by ion implantation are studied by Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Amorphous layers annealed in vacuum at 500°
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|Source:||Journal of Applied Physics|
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