Damage Buildup in GaN under Ion Bombardment
The damage buildup until amorphization in wurtzite GaN films under kev light (12C) and heavy (197Au) ion bombardment at room and liquid nitrogen (LN2) temperatures is studied by Rutherford backscattering/channeling (RBS/C) spectrometry and transmission electron microscopy (TEM). The effect of beam flux on implantation damage in GaN is reported. A marked similarity between damage buildup for light and heavy ion bombardment regimes is observed. The results point to substantial dynamic annealing...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review B|
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