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Ion-Beam-Induced Porosity of GaN

Kucheyev, Sergei; Williams, James; Jagadish, Chennupati; Zou, Jin; Craig, Vincent; Li, Gang

Description

Wurtzite GaN films bombarded with heavy ions (197Au+) show anomalous swelling of the implanted region with corresponding volume expansion up to ∼50%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An import

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/89278
Source: Applied Physics Letters

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