Ion-Beam-Induced Porosity of GaN
Wurtzite GaN films bombarded with heavy ions (197Au+) show anomalous swelling of the implanted region with corresponding volume expansion up to ∼50%. Results show that this phenomenon is due to the formation of a porous layer of amorphous GaN. An import
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Kucheyev_Ion-Beam-Induced_Porosity_of_2000.pdf||564.34 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.