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Nanoindentation of Epitaxial GaN Films

Kucheyev, Sergei; Bradby, Jodie; Williams, James; Jagadish, Chennupati; Toth, M; Phillips, Matthew R; Swain, Michael Vincent

Description

Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 μm) as well as

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/89276
Source: Applied Physics Letters

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