Nanoindentation of Epitaxial GaN Films
Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 μm) as well as
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Kucheyev_Nanoindentation_of_Epitaxial_2000.pdf||542.04 kB||Adobe PDF||Request a copy|
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