High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering
Visible and ultraviolet micro-Raman scattering was employed to monitor the high-pressure high-temperature annealing of Mg/P-implanted GaN films. The results illustrate the use of Raman scattering to monitor processing of GaN where fast feedback is required. Temperatures up to 1500°C with nitrogen overpressures of 1-1.5 GPa were used during the annealing. The crystalline quality, the strain, and the free carrier concentration in the ion-implanted GaN films was monitored, averaged over the layer...[Show more]
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|Source:||Journal of Applied Physics|
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