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High rate etching of 4H-SiC using a SF6/O2 helicon plasma

Chabert, Pascal; Proust, N; Perrin, J; Boswell, Roderick

Description

The etch rate of 4H-SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of

dc.contributor.authorChabert, Pascal
dc.contributor.authorProust, N
dc.contributor.authorPerrin, J
dc.contributor.authorBoswell, Roderick
dc.date.accessioned2015-12-13T23:16:09Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/89260
dc.description.abstractThe etch rate of 4H-SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.titleHigh rate etching of 4H-SiC using a SF6/O2 helicon plasma
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume76
dc.date.issued2000
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub19225
local.type.statusPublished Version
local.contributor.affiliationChabert, Pascal, Ecole Polytechnique
local.contributor.affiliationProust, N, Thomson-CSF/LCR,
local.contributor.affiliationPerrin, J, Airliquide
local.contributor.affiliationBoswell, Roderick, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue16
local.bibliographicCitation.startpage2310
local.bibliographicCitation.lastpage2312
dc.date.updated2015-12-12T08:46:50Z
local.identifier.scopusID2-s2.0-0001167037
CollectionsANU Research Publications

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