High rate etching of 4H-SiC using a SF6/O2 helicon plasma
The etch rate of 4H-SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Chabert_High_rate_etching_of_4H-SiC_2000.pdf||552.29 kB||Adobe PDF||Request a copy|
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