Skip navigation
Skip navigation

Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

Liu, Qiu Xiang; Li, Zhong Hui; Chen, X S; Lu, Wei; Shen, S C; Yuan, Shu; Jagadish, Chennupati; Tan, Hark Hoe

Description

The effects of intermixing of Al0.54Ga0.46As/GaAs/Al0.54Ga0.46A s QW enhanced by proton implantation and subsequent annealing have been investigated by PL and PR measurements. Comparing with as-grown QW, obvious blueshifts of all the transitions were observed. The H22 transition was found to be more sensitive to the implantation doses than that of H11. The experimental results are consistent with the theoretical results calculated by using the model of error function profile of Al composition....[Show more]

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/89182
Source: Physics Letters A
DOI: 10.1016/S0375-9601(00)00347-9

Download

File Description SizeFormat Image
01_Liu_Arsenic_implantation-induced_2000.pdf98.96 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator