Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

Liu, Qiu Xiang; Li, Zhong Hui; Chen, X S; Lu, Wei; Shen, S C; Yuan, Shu; Jagadish, Chennupati; Tan, Hark Hoe

doi:10.1016/S0375-9601(00)00347-9

A change is coming. Click to see a sneak peek of the new Open Research Repository.

Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

Request a Copy

link to publisher version

Altmetric Citations

Liu, Qiu Xiang; Li, Zhong Hui; Chen, X S; Lu, Wei; Shen, S C; Yuan, Shu; Jagadish, Chennupati; Tan, Hark Hoe

Description

The effects of intermixing of Al0.54Ga0.46As/GaAs/Al0.54Ga0.46A s QW enhanced by proton implantation and subsequent annealing have been investigated by PL and PR measurements. Comparing with as-grown QW, obvious blueshifts of all the transitions were observed. The H22 transition was found to be more sensitive to the implantation doses than that of H11. The experimental results are consistent with the theoretical results calculated by using the model of error function profile of Al composition....[Show more] The results are fruitful to understand the potential profile after intermixing enhanced by proton implantation, and also to the application of implantation enhanced intermixing effects on devices.

Collections	ANU Research Publications
Date published:	2000
Type:	Journal article
URI:	http://hdl.handle.net/1885/89182
Source:	Physics Letters A
DOI:	10.1016/S0375-9601(00)00347-9

Download

File	Description	Size	Format	Image
01_Liu_Arsenic_implantation-induced_2000.pdf		98.96 kB	Adobe PDF	Request a copy

Show full item record

Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

Altmetric Citations

Description

Download