The Effect of Ion-Irradiation and Annealing on the Luminescence of Si Nanocrystals in SiO2
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Cheylan, S; Langford, N; Elliman, Robert
Description
SiO2 layers containing Si nanocrystals were irradiated with either 400 keV or 3 MeV Si ions to determine the effect of nuclear and electronic energy loss processes on defect production and luminescence. Irradiation reduced the nanocrystal-related luminescence at 806 nm and produced a well-known defect emission at 640 nm. Irradiation had a similar dose dependence for both 400 keV and 3 MeV ions. despite significant differences in the magnitude and nature of their energy loss. This was reconciled...[Show more]
Collections | ANU Research Publications |
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Date published: | 2000 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/89122 |
Source: | Nuclear Instruments and Methods in Physics Research: Section B |
DOI: | 10.1016/S0168-583X(99)00795-8 |
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01_Cheylan_The_Effect_of_Ion-Irradiation_2000.pdf | 132.77 kB | Adobe PDF | Request a copy |
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