The Effect of Ion-Irradiation and Annealing on the Luminescence of Si Nanocrystals in SiO2
SiO2 layers containing Si nanocrystals were irradiated with either 400 keV or 3 MeV Si ions to determine the effect of nuclear and electronic energy loss processes on defect production and luminescence. Irradiation reduced the nanocrystal-related luminescence at 806 nm and produced a well-known defect emission at 640 nm. Irradiation had a similar dose dependence for both 400 keV and 3 MeV ions. despite significant differences in the magnitude and nature of their energy loss. This was reconciled...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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