Skip navigation
Skip navigation

The Effect of Ion-Irradiation and Annealing on the Luminescence of Si Nanocrystals in SiO2

Cheylan, S; Langford, N; Elliman, Robert

Description

SiO2 layers containing Si nanocrystals were irradiated with either 400 keV or 3 MeV Si ions to determine the effect of nuclear and electronic energy loss processes on defect production and luminescence. Irradiation reduced the nanocrystal-related luminescence at 806 nm and produced a well-known defect emission at 640 nm. Irradiation had a similar dose dependence for both 400 keV and 3 MeV ions. despite significant differences in the magnitude and nature of their energy loss. This was reconciled...[Show more]

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/89122
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(99)00795-8

Download

File Description SizeFormat Image
01_Cheylan_The_Effect_of_Ion-Irradiation_2000.pdf132.77 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator