Choi, S; Elliman, Robert; Cheylan, S; Martin, J
Photoluminescence (PL) and electron-spin resonance have been used to study intrinsic defects in fused silica during ion implantation and annealing procedures designed to form and H-passivate Si crystallites. Under 250 nm (5 eV) photon excitation, the unimplanted silica has PL bands at 390 (3.2 eV) and 288 nm (4.3 eV). Implantation with 400 keV Si ions creates paramagnetic defects but reduces both the 3.2 and 4.3 eV emissions. Implantation to doses ≥ 2 × 1017Si cm-2 produces an additional weak...[Show more]
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