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DLTS of low-energy hydrogen ion implanted in n-Si

Deenapanray, Prakash


We have used deep level transient spectroscopy and capacitance-voltage measurements to study the influence of low-energy hydrogen ion implantation on the creation of defects in n-Si. In particular, we have studied the ion fluence dependence of the free carrier compensation at room temperature, and we have measured the generation of VO-H complex and VP-pair in ion implanted samples. The 7.5 keV H ions created defects in the top 0.3 μm of samples, which resulted in carrier compensation to depths...[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: Physica B
DOI: 10.1016/j.physb.2003.09.242


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