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EXAFS Characterisation of Ge Nanocrystals in Silica

Ridgway, Mark C; Azevedo, G de M; Glover, Christopher; Elliman, Robert; Llewellyn, David; Cheung, Allen; Johannessen, Bernt; Brett, David Alisdair; Foran, Garry J

Description

The formation and structure of Ge nanocrystals produced in silica by ion-implantation and thermal annealing were studied with transmission electron microscopy, Raman spectroscopy and extended X-ray absorption fine structure (EXAFS) spectroscopy. We compare results derived from these complementary techniques, focusing on the use of EXAFS to study the short-range order about Ge atoms. Utilizing this synchrotron-radiation-based analytical method, we show the nanocrystal inter-atomic distance...[Show more]

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/88537
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2004.01.004

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