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Solubility Limits of Dopants in 4H-SiC

Linnarsson, M K; Zimmermann, U; Wong-Leung, Yin-Yin (Jennifer); Schoner, A; Janson, M S; Jagadish, Chennupati; Svensson, Bengt Gunnar

Description

Epitaxial 4H-SiC structures with heavily boron or aluminium doped layers have been prepared by vapour phase epitaxy. The samples have been annealed in Ar atmosphere in an RF-heated furnace between 1700 and 2000 °C for 45 min to 64 h. Secondary ion mass s

dc.contributor.authorLinnarsson, M K
dc.contributor.authorZimmermann, U
dc.contributor.authorWong-Leung, Yin-Yin (Jennifer)
dc.contributor.authorSchoner, A
dc.contributor.authorJanson, M S
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorSvensson, Bengt Gunnar
dc.date.accessioned2015-12-13T23:13:56Z
dc.identifier.issn0169-4332
dc.identifier.urihttp://hdl.handle.net/1885/88359
dc.description.abstractEpitaxial 4H-SiC structures with heavily boron or aluminium doped layers have been prepared by vapour phase epitaxy. The samples have been annealed in Ar atmosphere in an RF-heated furnace between 1700 and 2000 °C for 45 min to 64 h. Secondary ion mass s
dc.publisherElsevier
dc.sourceApplied Surface Science
dc.subjectKeywords: Annealing; Doping (additives); Furnaces; Phase composition; Precipitation (chemical); Secondary ion mass spectrometry; Solubility; Transmission electron microscopy; Vapor phase epitaxy; Solubility limits; Silicon carbide Precipitates; SiC; SIMS; Solubility limit; TEM
dc.titleSolubility Limits of Dopants in 4H-SiC
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume203-204
dc.date.issued2003
local.identifier.absfor091207 - Metals and Alloy Materials
local.identifier.ariespublicationMigratedxPub18030
local.type.statusPublished Version
local.contributor.affiliationLinnarsson, M K, Royal Institute of Technology
local.contributor.affiliationZimmermann, U, Royal Institute of Technology
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSchoner, A, ACREO AB
local.contributor.affiliationJanson, M S, Royal Institute of Technology
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSvensson, Bengt Gunnar, University of Oslo
local.description.embargo2037-12-31
local.bibliographicCitation.startpage427
local.bibliographicCitation.lastpage432
local.identifier.doi10.1016/S0169-4332(02)00694-3
dc.date.updated2015-12-12T08:36:19Z
local.identifier.scopusID2-s2.0-12244291512
CollectionsANU Research Publications

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