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Solubility Limits of Dopants in 4H-SiC

Linnarsson, M K; Zimmermann, U; Wong-Leung, Yin-Yin (Jennifer); Schoner, A; Janson, M S; Jagadish, Chennupati; Svensson, Bengt Gunnar

Description

Epitaxial 4H-SiC structures with heavily boron or aluminium doped layers have been prepared by vapour phase epitaxy. The samples have been annealed in Ar atmosphere in an RF-heated furnace between 1700 and 2000 °C for 45 min to 64 h. Secondary ion mass s

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/88359
Source: Applied Surface Science
DOI: 10.1016/S0169-4332(02)00694-3

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