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Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers

Deenapanray, Prakash; Jagadish, Chennupati; Tan, Hark Hoe


Defects created in rapid thermally annealed n-GaAs epilayers capped with native oxide layers have been investigated using deep-level transient spectroscopy (DLTS). The native oxide layers were formed at room temperature using pulsed anodic oxidation. A hole trap H0, due to either interface states or injection of interstitials, is observed around the detection limit of DLTS in oxidized samples. Rapid thermal annealing introduces three additional minority-carrier traps H1 (EV + 0.44 eV), H2 (EV +...[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: Applied Physics A: Materials Science and Processing
DOI: 10.1007/s00339-002-1826-5


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