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Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon

Leveque, P; Hallen, A; Svensson, Bengt Gunnar; Wong-Leung, Jennifer; Jagadish, Chennupati; Privitera, V


Hydrogen related defects in high purity n-type float zone silicon samples have been studied by means of Deep Level Transient Spectroscopy. They were introduced, as well as the characteristic vacancy-oxygen (VO) and divacancy (V2) centers, by MeV proton implantation. Two hydrogen related defect levels were resolved at 0.32 eV and 0.45 eV below the conduction band edge (Ec). Careful annealing studies indicate strongly that a third hydrogen related level, overlapping with the singly negative...[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: European Physical Journal - Applied Physics


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