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Structure of Amorphous Silicon Investigated by EXAFS

Glover, Christopher; Foran, Garry J; Ridgway, Mark C

Description

The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted...[Show more]

dc.contributor.authorGlover, Christopher
dc.contributor.authorForan, Garry J
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T23:13:51Z
dc.date.available2015-12-13T23:13:51Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/88316
dc.description.abstractThe local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose dependent structure of another Group IV semiconductor: a-Ge. Specifically, no ion dose dependence of the a-Si structural parameters were observed.
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Crystal structure; Ion implantation; Ions; Semiconductor materials; X ray diffraction analysis; Amorphous semiconductors; Amorphous silicon Amorphous semiconductors; Extended X-ray absorption fine structure spectroscopy; Silicon
dc.titleStructure of Amorphous Silicon Investigated by EXAFS
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume199
dc.date.issued2003
local.identifier.absfor091207 - Metals and Alloy Materials
local.identifier.ariespublicationMigratedxPub17961
local.type.statusPublished Version
local.contributor.affiliationGlover, Christopher, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationForan, Garry J, Australian Nuclear Science and Technology Organisation
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.startpage195
local.bibliographicCitation.lastpage199
local.identifier.doi10.1016/S0168-583X(02)01544-6
dc.date.updated2015-12-12T08:35:49Z
local.identifier.scopusID2-s2.0-0037243215
CollectionsANU Research Publications

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