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Nature of Planar Defects in Ion-implanted GaN

Wang, You-Gan; Zou, Jin; Kucheyev, Sergei O; Williams, James; Jagadish, Chennupati; Li, Gang


Wurtzite GaN films bombarded with keV ions were studied by high-resolution transmission electron microscopy. Results showed that irradiation under a wide range of implant conditions (such as ion mass, dose, and implant temperature) led to the formation of planar defects which were parallel to the basal plane of the wurtzite structure. For all implant conditions studied, all planar defects observed in the ∼20 nm thick near-surface layers of GaN were interstitial in nature and had Burgers vectors...[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: Electrochemical and Solid-State Letters
DOI: 10.1149/1.1541257


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