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Direct Observation of Structural Relaxation in Amorphous Compound Semiconductors

de Azevedo, Gustavo; Glover, C J; Yu, Kin Man; Foran, Garry J; Ridgway, Mark C

Description

Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated

dc.contributor.authorde Azevedo, Gustavo
dc.contributor.authorGlover, C J
dc.contributor.authorYu, Kin Man
dc.contributor.authorForan, Garry J
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T23:13:51Z
dc.date.available2015-12-13T23:13:51Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/88314
dc.description.abstractExtended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Amorphous materials; Chemical bonds; Crystallization; Free energy; Ion implantation; Relaxation processes; Annihilation; Semiconductor materials Amorphous solids; EXAFS; InAs; Ion implantation
dc.titleDirect Observation of Structural Relaxation in Amorphous Compound Semiconductors
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume206
dc.date.issued2003
local.identifier.absfor091207 - Metals and Alloy Materials
local.identifier.ariespublicationMigratedxPub17959
local.type.statusPublished Version
local.contributor.affiliationde Azevedo, Gustavo, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGlover, C J, Uppsala University
local.contributor.affiliationYu, Kin Man, Lawrence Livermore National Laboratory
local.contributor.affiliationForan, Garry J, Australian Nuclear Science and Technology Organisation
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.startpage1024
local.bibliographicCitation.lastpage1027
local.identifier.doi10.1016/S0168-583X(03)00926-1
dc.date.updated2015-12-12T08:35:48Z
local.identifier.scopusID2-s2.0-0037736647
CollectionsANU Research Publications

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