Skip navigation
Skip navigation

Direct Observation of Structural Relaxation in Amorphous Compound Semiconductors

de Azevedo, Gustavo; Glover, C J; Yu, Kin Man; Foran, Garry J; Ridgway, Mark C


Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(03)00926-1


There are no files associated with this item.

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator