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Direct Observation of Structural Relaxation in Amorphous Compound Semiconductors

de Azevedo, Gustavo; Glover, C J; Yu, Kin Man; Foran, Garry J; Ridgway, Mark C

Description

Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/88314
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(03)00926-1

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