Shrinkage Mechanism of Nanocavities in Amorphous Si under Ion Irradiation: An in situ Study
Nanocavities of diameter <25 nm can be readily formed in Si substrates by H or He implantation followed by thermal annealing. These nanocavities readily interact with both fast-diffusing metal impurities and implantation-induced Si interstitials and under prolonged ion irradiation, nanocavities eventually disappear. In this study, we have measured nanocavity evolution under ion irradiation when the nanocavities were surrounded by amorphous Si. The average nanocavity diameter was monitored by in...[Show more]
|Collections||ANU Research Publications|
|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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