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Shrinkage Mechanism of Nanocavities in Amorphous Si under Ion Irradiation: An in situ Study

Ruault, M-O; Ridgway, Mark C; Fortuna, Frank Nicholas; Bernas, Harry; Williams, James

Description

Nanocavities of diameter <25 nm can be readily formed in Si substrates by H or He implantation followed by thermal annealing. These nanocavities readily interact with both fast-diffusing metal impurities and implantation-induced Si interstitials and under prolonged ion irradiation, nanocavities eventually disappear. In this study, we have measured nanocavity evolution under ion irradiation when the nanocavities were surrounded by amorphous Si. The average nanocavity diameter was monitored by in...[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/88205
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(03)00860-7

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