Electron emission properties of a defect at ~( E c �0.23eV) in impurity-free disorded n-GaAs
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Deenapanray, Prakash; Meyer, W E; Auret, Francois D; Krispin, M; Jagadish, Chennupati
Description
We have used deep level transient spectroscopy to study the electric-field-enhanced electron emission rate from a defect S1 observed in impurity-free disordered n-GaAs. The field dependence of emission rate could be well described by the electron emission from a Gaussian potential well with ground energy state ∼0.25 eV. The phonon-assisted tunneling model with a triangular barrier could also adequately fit our experimental data for a large localized quasi-stationary energy level of ∼0.57 eV....[Show more]
Collections | ANU Research Publications |
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Date published: | 2003 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/88083 |
Source: | Physica B |
DOI: | 10.1016/j.physb.2003.09.084 |
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