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Electron emission properties of a defect at ~( E c �0.23eV) in impurity-free disorded n-GaAs

Deenapanray, Prakash; Meyer, W E; Auret, Francois D; Krispin, M; Jagadish, Chennupati

Description

We have used deep level transient spectroscopy to study the electric-field-enhanced electron emission rate from a defect S1 observed in impurity-free disordered n-GaAs. The field dependence of emission rate could be well described by the electron emission from a Gaussian potential well with ground energy state ∼0.25 eV. The phonon-assisted tunneling model with a triangular barrier could also adequately fit our experimental data for a large localized quasi-stationary energy level of ∼0.57 eV....[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/88083
Source: Physica B
DOI: 10.1016/j.physb.2003.09.084

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