Electron emission properties of a defect at ~( E c �0.23eV) in impurity-free disorded n-GaAs
We have used deep level transient spectroscopy to study the electric-field-enhanced electron emission rate from a defect S1 observed in impurity-free disordered n-GaAs. The field dependence of emission rate could be well described by the electron emission from a Gaussian potential well with ground energy state ∼0.25 eV. The phonon-assisted tunneling model with a triangular barrier could also adequately fit our experimental data for a large localized quasi-stationary energy level of ∼0.57 eV....[Show more]
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