Skip navigation
Skip navigation

Binding Energies of Hydrogen-like Impurities in a Semiconductor in Intense Terahertz Laser Fields

Nie, J; Xu, Wen; Lin, L B

Description

We present a detailed theoretical study of the influence of linearly polarized intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for ground (1s) and first excited (2s) states, E1s and E2s, on the intensity and the frequency of the THz radiation has been examined for a GaAs-based system. It is found that E1s, E2s and E2s-E1s decrease with increasing radiation intensity or with decreasing radiation...[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/87993
Source: International Journal of Modern Physics B
DOI: 10.1142/S021797920301834X

Download

File Description SizeFormat Image
01_Nie_Binding_Energies_of_2003.pdf213.98 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator