A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC
We study the effect of substrate orientation on defect formation in 4H-SiC. Both (112̄0) and (0001) n-type 4H-SiC substrates were implanted with 400 keV P. The various samples, both as-implanted samples and annealed, were studied by Rutherford backscatte
|Collections||ANU Research Publications|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.