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A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC

Wong-Leung, Yin-Yin (Jennifer); Linnarsson, M K; Svensson, Bengt Gunnar

Description

We study the effect of substrate orientation on defect formation in 4H-SiC. Both (112̄0) and (0001) n-type 4H-SiC substrates were implanted with 400 keV P. The various samples, both as-implanted samples and annealed, were studied by Rutherford backscatte

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/87851
Source: Physica B
DOI: 10.1016/j.physb.2003.09.052

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