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Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO

Ip, K; Overberg, M E; Heo, Y W; Norton, D P; Pearton, S J; Stutz, C E; Kucheyev, Sergei; Jagadish, Chennupati; Williams, James; Luo, B; Ren, Fan; Look, David C; Zavada, J M

Description

Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderate (100-300°C) temperatures. Incorporation depths of >25 μm were obtained in 0.5 h at 300°C, producing a diffusivity of ∼8 × 10-10 cm2/Vs at this temp

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/87802
Source: Solid-State Electronics
DOI: 10.1016/S0038-1101(03)00207-7

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