Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation
A single Al0.5Ga0.5As/GaAs V-grooved quantum wire modified by selective ion implantation and rapid thermal annealing was investigated by using spatially resolved micro-photoluminescence spectroscopy and magneto-resistance measurements. The results of spatially resolved photoluminescence indicate that the ion-implantation-induced quantum well intermixing significantly raises the electronic sub-band energies in the side quantum wells (SQWs) and vertical quantum wells, and a more efficient...[Show more]
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|Source:||Journal of Luminescence|
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