In Situ Electrical Characterization of Phase Transformations in Si during Indentation
An in situ electrical characterization technique is used to study details of the deformation behavior of crystalline silicon during nanoindentation. The experimental arrangement involves the measurement of current flow through a reverse-biased Schottky diode and exploits a sharp transition from a Schottky to an Ohmic contact that accompanies the formation of a metallic Si-II phase directly under the indenter. This electrical technique is particularly sensitive to the nature and extent of the...[Show more]
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|Source:||Physical Review B|
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