Deep Level Transient Spectroscopy of Defects Introduced in Si and SiGe by Low Energy Particles
Ion implantation and plasma processing techniques are routinely used for the fabrication of semiconductor devices. In particular, these techniques employ low energy ions, which modify the electrical and optical properties of the semiconductor material, and, consequently, of the devices that are fabricated thereon, by creating defects in the semiconductor lattice. In this paper, we review our results on the electrical characterization of defects created in Si by low energy noble gas ions (He,...[Show more]
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|Source:||Journal of Physics: Condensed Matter|
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