Deep Level Transient Spectroscopy of Defects Introduced in Si and SiGe by Low Energy Particles
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Deenapanray, Prakash; Auret, F Danie
Description
Ion implantation and plasma processing techniques are routinely used for the fabrication of semiconductor devices. In particular, these techniques employ low energy ions, which modify the electrical and optical properties of the semiconductor material, and, consequently, of the devices that are fabricated thereon, by creating defects in the semiconductor lattice. In this paper, we review our results on the electrical characterization of defects created in Si by low energy noble gas ions (He,...[Show more]
Collections | ANU Research Publications |
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Date published: | 2003 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/86907 |
Source: | Journal of Physics: Condensed Matter |
DOI: | 10.1088/0953-8984/15/39/011 |
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01_Deenapanray_Deep_Level_Transient_2003.pdf | 448.55 kB | Adobe PDF | Request a copy |
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