Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design
Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fabricated. The internal absorption coefficient is as low as 2.5 cm-1, due to the restricted field extension in the 0.3-μm-thick p-type top AlGaAs cladding
|Collections||ANU Research Publications|
|Source:||IEEE Journal of Quantum Electronics|
|01_Buda_Low_Loss,_Thin_p-clad_980-nm_2003.pdf||711.62 kB||Adobe PDF||Request a copy|
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