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Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design

Buda, Manuela; Hay, J; Tan, Hoe Hark; Wong-Leung, Yin-Yin (Jennifer); Jagadish, Chennupati

Description

Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fabricated. The internal absorption coefficient is as low as 2.5 cm-1, due to the restricted field extension in the 0.3-μm-thick p-type top AlGaAs cladding

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
URI: http://hdl.handle.net/1885/86859
Source: IEEE Journal of Quantum Electronics
DOI: 10.1109/JQE.2003.810270

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