Skip navigation
Skip navigation

Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design

Buda, Manuela; Hay, J; Wong-Leung, Yin-Yin (Jennifer); Jagadish, Chennupati; Tan, Hark Hoe


Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fabricated. The internal absorption coefficient is as low as 2.5 cm-1, due to the restricted field extension in the 0.3-μm-thick p-type top AlGaAs cladding

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: IEEE Journal of Quantum Electronics
DOI: 10.1109/JQE.2003.810270


File Description SizeFormat Image
01_Buda_Low_Loss,_Thin_p-clad_980-nm_2003.pdf711.62 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator