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Validity of simplified Shockley-Read-Hall statistics for modelling carrier lifetimes in crystalline silicon

MacDonald, Daniel; Cuevas, Andres

Description

The Shockley-Read-Hall model, in its simplest and most common form, is often used to describe both injection- and temperature-dependent carrier lifetime measurements. Such lifetime modeling has provided the basis for ultrasensitive spectroscopic techniques for the study of recombination centers in crystalline silicon. However, this approximate model is only valid when the density of recombination centers is small enough to avoid trapping effects, which cause distortions in the excess mobile...[Show more]

dc.contributor.authorMacDonald, Daniel
dc.contributor.authorCuevas, Andres
dc.date.accessioned2015-12-13T23:09:05Z
dc.date.available2015-12-13T23:09:05Z
dc.identifier.issn0163-1829
dc.identifier.urihttp://hdl.handle.net/1885/86844
dc.description.abstractThe Shockley-Read-Hall model, in its simplest and most common form, is often used to describe both injection- and temperature-dependent carrier lifetime measurements. Such lifetime modeling has provided the basis for ultrasensitive spectroscopic techniques for the study of recombination centers in crystalline silicon. However, this approximate model is only valid when the density of recombination centers is small enough to avoid trapping effects, which cause distortions in the excess mobile carrier concentrations. In this work, the simplified Shockley-Read-Hall model is compared with a more general solution of the continuity equations that takes account of carrier trapping. This comparison leads to an expression for the upper limit on the recombination center density for which the simplified Shockley-Read-Hall model remains accurate. The limit depends not only on the dopant density, but also on the energy level and electron and hole capture cross sections for a given type of recombination center. The results allow experimental conditions that do not invalidate the use of the simplified Shockley-Read-Hall model to be determined.
dc.publisherAmerican Physical Society
dc.sourcePhysical Review B
dc.subjectKeywords: silicon; article; comparative study; crystal; density; electron; energy; injection; measurement; model; statistics; temperature dependence
dc.titleValidity of simplified Shockley-Read-Hall statistics for modelling carrier lifetimes in crystalline silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume67
dc.date.issued2003
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.ariespublicationMigratedxPub15883
local.type.statusPublished Version
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.bibliographicCitation.startpage075203-1 to 075203-7
dc.date.updated2015-12-12T08:17:33Z
local.identifier.scopusID2-s2.0-0037441236
CollectionsANU Research Publications

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