Validity of simplified Shockley-Read-Hall statistics for modelling carrier lifetimes in crystalline silicon
The Shockley-Read-Hall model, in its simplest and most common form, is often used to describe both injection- and temperature-dependent carrier lifetime measurements. Such lifetime modeling has provided the basis for ultrasensitive spectroscopic techniques for the study of recombination centers in crystalline silicon. However, this approximate model is only valid when the density of recombination centers is small enough to avoid trapping effects, which cause distortions in the excess mobile...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review B|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.