Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate
Highly strained InxGa1-xAs (x∼0.5) quantum wells were grown on GaAs substrates at low temperature by metal organic vapor-phase epitaxy. By depositing this material in the kinetically limited growth regime, high-quality pseudomorphic layers were obtained
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|Source:||Journal of Crystal Growth|
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