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Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate

Tan, Hoe Hark; Lever McGowan, Penelope; Jagadish, Chennupati

Description

Highly strained InxGa1-xAs (x∼0.5) quantum wells were grown on GaAs substrates at low temperature by metal organic vapor-phase epitaxy. By depositing this material in the kinetically limited growth regime, high-quality pseudomorphic layers were obtained

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
URI: http://hdl.handle.net/1885/86810
Source: Journal of Crystal Growth
DOI: 10.1016/j.jcrysgro.2004.10.031

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