Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AIGaAs
Impurity-free disordering (IFD) of GaAs and AlxGa 1-xAs epitaxial layers using SiOx capping in conjunction with annealing was studied by deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements. Three dominant electron traps S1
|Collections||ANU Research Publications|
|Source:||Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.