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Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AIGaAs

Deenapanray, Prakash; Krispin, M; Meyer, W E; Tan, Hoe Hark; Jagadish, Chennupati; Auret, Francois D

Description

Impurity-free disordering (IFD) of GaAs and AlxGa 1-xAs epitaxial layers using SiOx capping in conjunction with annealing was studied by deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements. Three dominant electron traps S1

CollectionsANU Research Publications
Date published: 2004
Type: Conference paper
URI: http://hdl.handle.net/1885/86784
Source: Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications

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