Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon
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MacDonald, Daniel; Mackel, Helmut; Doshi, Sachin; Brendle, Willi; Cuevas, Andres; Williams, James; Conway, Martin
Description
The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.
Collections | ANU Research Publications |
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Date published: | 2003 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/86742 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.1572469 |
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