Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon
The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
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