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Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

MacDonald, Daniel; Mackel, Helmut; Doshi, Sachin; Brendle, Willi; Cuevas, Andres; Williams, James; Conway, Martin


The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1572469


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