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Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures

Buda, Manuela; Hay, J; Fu, Lan; Jagadish, Chennupati; Reece, Peter; Gal, Michael; Tan, Hark Hoe

Description

Impurity-free intermixing using spin-on-glass (SOG) capping layers was studied in undoped and Zn-doped laser diode structures using photoluminescence and C-V profiling. The doped laser structure was further processed into devices and the intermixed structures were characterized. Considerable Zn migration after annealing with Ga-doped SOG (cap layer that prevents intermixing in undoped samples) was observed, leading to degradation of device performance. The "thermal" intermixing is considerably...[Show more]

dc.contributor.authorBuda, Manuela
dc.contributor.authorHay, J
dc.contributor.authorFu, Lan
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorReece, Peter
dc.contributor.authorGal, Michael
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-13T23:08:29Z
dc.identifier.issn0013-4651
dc.identifier.urihttp://hdl.handle.net/1885/86725
dc.description.abstractImpurity-free intermixing using spin-on-glass (SOG) capping layers was studied in undoped and Zn-doped laser diode structures using photoluminescence and C-V profiling. The doped laser structure was further processed into devices and the intermixed structures were characterized. Considerable Zn migration after annealing with Ga-doped SOG (cap layer that prevents intermixing in undoped samples) was observed, leading to degradation of device performance. The "thermal" intermixing is considerably larger in doped structures than in undoped structures. The device performance is not significantly affected only if the annealing step is made with no cap. Differential intermixing can still be achieved by etching the highly doped layers and afterward capping with an undoped SOG layer that injects vacancies. A laser-waveguide device was demonstrated using undoped SOG layers.
dc.publisherElectrochemical Society Inc
dc.sourceJournal of the Electrochemical Society
dc.subjectKeywords: Annealing; Optoelectronic devices; Photoluminescence; Semiconducting aluminum compounds; Semiconducting indium gallium arsenide; Semiconductor device structures; Semiconductor doping; Zinc; Differential intermixing; Impurity-free intermixing; Spin-on-glas
dc.titleEffects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume150
dc.date.issued2003
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.absfor020501 - Classical and Physical Optics
local.identifier.ariespublicationMigratedxPub15680
local.type.statusPublished Version
local.contributor.affiliationBuda, Manuela, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationHay, J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationReece, Peter, University of New South Wales
local.contributor.affiliationGal, Michael, University of New South Wales
local.description.embargo2037-12-31
local.bibliographicCitation.issue8
local.bibliographicCitation.startpageG481
local.bibliographicCitation.lastpageG487
local.identifier.doi10.1149/1.1588304
dc.date.updated2015-12-12T08:13:55Z
local.identifier.scopusID2-s2.0-0042208206
CollectionsANU Research Publications

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