Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures
Impurity-free intermixing using spin-on-glass (SOG) capping layers was studied in undoped and Zn-doped laser diode structures using photoluminescence and C-V profiling. The doped laser structure was further processed into devices and the intermixed structures were characterized. Considerable Zn migration after annealing with Ga-doped SOG (cap layer that prevents intermixing in undoped samples) was observed, leading to degradation of device performance. The "thermal" intermixing is considerably...[Show more]
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|Source:||Journal of the Electrochemical Society|
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