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Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition

Gao, Qiang; Jagadish, Chennupati; Deenapanray, Prakash; Tan, Hark Hoe


We have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers using deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the layers grown by metalorganic chemical vapour deposition. Rapid thermal annealing (RTA) in the temperature range 600-900°C for 30s created six hole traps HA1 (EV + 0.22 eV), HA2 (EV + 0.32eV), HA3 (EV + 0.38eV), HA4 (EV + 0.39eV),...[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: Japanese Journal of Applied Physics


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