Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
We have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers using deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the layers grown by metalorganic chemical vapour deposition. Rapid thermal annealing (RTA) in the temperature range 600-900°C for 30s created six hole traps HA1 (EV + 0.22 eV), HA2 (EV + 0.32eV), HA3 (EV + 0.38eV), HA4 (EV + 0.39eV),...[Show more]
|Collections||ANU Research Publications|
|Source:||Japanese Journal of Applied Physics|
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