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Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition

Gao, Qiang; Jagadish, Chennupati; Deenapanray, Prakash; Tan, Hark Hoe

Description

We have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers using deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the layers grown by metalorganic chemical vapour deposition. Rapid thermal annealing (RTA) in the temperature range 600-900°C for 30s created six hole traps HA1 (EV + 0.22 eV), HA2 (EV + 0.32eV), HA3 (EV + 0.38eV), HA4 (EV + 0.39eV),...[Show more]

dc.contributor.authorGao, Qiang
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorDeenapanray, Prakash
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-13T23:08:16Z
dc.date.available2015-12-13T23:08:16Z
dc.identifier.issn0021-4922
dc.identifier.urihttp://hdl.handle.net/1885/86599
dc.description.abstractWe have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers using deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the layers grown by metalorganic chemical vapour deposition. Rapid thermal annealing (RTA) in the temperature range 600-900°C for 30s created six hole traps HA1 (EV + 0.22 eV), HA2 (EV + 0.32eV), HA3 (EV + 0.38eV), HA4 (EV + 0.39eV), HA5 (EV + 0.55 eV), and HA6 (EV + 0.78 eV). Most of these defects are stable at 900°C, although their relative concentrations varied over the RTA temperature in this study. We discuss the origin of these hole traps based on previously reported hole traps in the literature. The increase in doping concentration in the annealed samples is also discussed.
dc.publisherJapan Society of Applied Physics
dc.sourceJapanese Journal of Applied Physics
dc.subjectKeywords: Capacitance; Carrier concentration; Crystal defects; Deep level transient spectroscopy; Electric potential; Epitaxial growth; Hole traps; Hydrogen bonds; Metallorganic chemical vapor deposition; Rapid thermal annealing; Semiconductor doping; Thermal effec Defects; DLTS; GaAsN epilayer; Hole traps; MOCVD
dc.titleDefect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume42
dc.date.issued2003
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub15513
local.type.statusPublished Version
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDeenapanray, Prakash, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.startpage6827
local.bibliographicCitation.lastpage6832
dc.date.updated2015-12-12T08:12:51Z
local.identifier.scopusID2-s2.0-1642495717
CollectionsANU Research Publications

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