Base doping and recombination activity of impurities in crystalline silicon solar cellts
The optimisation of base doping for industrial crystalline silicon solar cells is examined with model calculations. Focus is on the relation between base doping and carrier recombination through the important impurities interstitial iron (Fei) and the metastable boron-oxygen (BO) complex. In p-type silicon, the optimum base resistivity is strongly dependent on defect concentration. In n-type silicon, recombination due to Fei is much lower and nearly independent of resistivity. Fei is likely...[Show more]
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|Source:||Progress in Photovoltaics: Research and Applications|
|01_Geerligs_Base_doping_and_recombination_2004.pdf||114.76 kB||Adobe PDF||Request a copy|
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