Structural Modifications of Silicon-implanted GaAs Induced by the Athermal Annealing Technique
We have used high-resolution X-ray diffraction and Raman spectroscopy to investigate structural modifications inside and outside the focal region of Si-implanted GaAs samples that have been irradiated at high power by a focused short-pulse laser. Si atoms implanted into the GaAs matrix generate exciton-induced local lattice expansion, resulting in a satellite on the lower-angle side of the Bragg peak. After the laser pulse irradiation, surface features inside and outside the focal spot suggest...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics A: Materials Science and Processing|
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