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Structural Modifications of Silicon-implanted GaAs Induced by the Athermal Annealing Technique

Qadri, S B; Yousuf, M; Kendziora, C A; Nachumi, B; Fischer, R; Grun, J; Rao, Mulpuri V; Tucker, J; Siddiqui, S; Ridgway, Mark C

Description

We have used high-resolution X-ray diffraction and Raman spectroscopy to investigate structural modifications inside and outside the focal region of Si-implanted GaAs samples that have been irradiated at high power by a focused short-pulse laser. Si atoms implanted into the GaAs matrix generate exciton-induced local lattice expansion, resulting in a satellite on the lower-angle side of the Bragg peak. After the laser pulse irradiation, surface features inside and outside the focal spot suggest...[Show more]

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/86250
Source: Applied Physics A: Materials Science and Processing
DOI: 10.1007/s00339-003-2174-9

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