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A Deep Level Transient Spectroscopy Study of Vacancy-related Defect Profiles in Channeled Ion Implanted Silicon

Lay, M. D. H.; McCallum, Jeffrey C.; de Azevedo, Gustavo; Deenapanray, Prakash; Jagadish, Chennupati

dc.contributor.authorLay, M. D. H.
dc.contributor.authorMcCallum, Jeffrey C.
dc.contributor.authorde Azevedo, Gustavo
dc.contributor.authorDeenapanray, Prakash
dc.contributor.authorJagadish, Chennupati
dc.coverage.spatialSydney Australia
dc.date.accessioned2015-12-13T23:07:11Z
dc.date.available2015-12-13T23:07:11Z
dc.date.createdDecember 11 2002
dc.identifier.isbn1097-2137
dc.identifier.urihttp://hdl.handle.net/1885/86093
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002)
dc.source2002 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
dc.titleA Deep Level Transient Spectroscopy Study of Vacancy-related Defect Profiles in Channeled Ion Implanted Silicon
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2003
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub14834
local.type.statusMetadata only
local.contributor.affiliationLay, M D H, University of Melbourne
local.contributor.affiliationMcCallum, Jeffrey C, University of Melbourne
local.contributor.affiliationde Azevedo, Gustavo, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDeenapanray, Prakash, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.startpage437
local.bibliographicCitation.lastpage440
dc.date.updated2015-12-12T08:08:10Z
CollectionsANU Research Publications

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