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Recombination Properties of Si-doped InGaAs/GaAs Quantum Dots

Siegert, J; Marcinkevicius, S; Fu, Lan; Jagadish, Chennupati

Description

The recombination properties of directly doped InGaAs/GaAs quantum dots (QDs) for application in quantum dot infrared photodetectors (QDIPs) have been investigated by time-resolved photoluminescence. Compared with undoped and barrier-doped samples, the overall effect of direct dot doping is found to be small, resulting in only slight deterioration of dot homogeneity. Low-temperature photoluminescence decay times decrease very little, indicating that direct doping does not cause a significant...[Show more]

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
URI: http://hdl.handle.net/1885/85168
Source: Nanotechnology
DOI: 10.1088/0957-4484/17/21/015

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