Siegert, J; Marcinkevicius, S; Fu, Lan; Jagadish, Chennupati
The recombination properties of directly doped InGaAs/GaAs quantum dots (QDs) for application in quantum dot infrared photodetectors (QDIPs) have been investigated by time-resolved photoluminescence. Compared with undoped and barrier-doped samples, the overall effect of direct dot doping is found to be small, resulting in only slight deterioration of dot homogeneity. Low-temperature photoluminescence decay times decrease very little, indicating that direct doping does not cause a significant...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.