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Preferential Amorphisation of Ge Nanocrystals in a Silica Matrix

Ridgway, Mark C; de Azevedo, Gustavo; Elliman, Robert; Wesch, W; Glover, Christopher; Miller, R; Llewellyn, David; Foran, Garry J; Hansen, Jeffrey; Nylandsted-Larsen, A

Description

Extended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose ∼40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation,...[Show more]

dc.contributor.authorRidgway, Mark C
dc.contributor.authorde Azevedo, Gustavo
dc.contributor.authorElliman, Robert
dc.contributor.authorWesch, W
dc.contributor.authorGlover, Christopher
dc.contributor.authorMiller, R
dc.contributor.authorLlewellyn, David
dc.contributor.authorForan, Garry J
dc.contributor.authorHansen, Jeffrey
dc.contributor.authorNylandsted-Larsen, A
dc.date.accessioned2015-12-13T23:03:48Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/85085
dc.description.abstractExtended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose ∼40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation, inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix and preferential nucleation of the amorphous phase at the nanocrystal/matrix interface.
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Amorphization; Germanium compounds; Ion beams; Irradiation; Phase transitions; Raman spectroscopy; Silica; Single crystals; EXAFS; Ion irradiation; Nanocrystals; Nanostructured materials Amorphisation; EXAFS; Ion irradiation; Nanocrystals; Raman
dc.titlePreferential Amorphisation of Ge Nanocrystals in a Silica Matrix
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume242
dc.date.issued2006
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationMigratedxPub13289
local.type.statusPublished Version
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationde Azevedo, Gustavo, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWesch, W, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGlover, Christopher, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMiller, R, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLlewellyn, David, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationForan, Garry J, Australian Nuclear Science and Technology Organisation
local.contributor.affiliationHansen, Jeffrey, University of Aarhus
local.contributor.affiliationNylandsted-Larsen, A, University of Aarhus
local.description.embargo2037-12-31
local.bibliographicCitation.startpage121
local.bibliographicCitation.lastpage124
local.identifier.doi10.1016/j.nimb.2005.08.024
dc.date.updated2015-12-12T07:51:18Z
local.identifier.scopusID2-s2.0-28544434978
CollectionsANU Research Publications

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